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Depth-resolved cathodoluminescence study of zinc oxide nanorods catalytically grown on p-type 4H-SiC

机译:p型4H-SiC催化生长的氧化锌纳米棒的深度分辨阴极发光研究

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摘要

Optical properties of ZnO nanorods (NRs) grown by vapour-liquid-solid (VLS) technique on 4H-p-SiC substrates were probed by cathodoluminescence (CL) measurements at room temperature and at 5 K complemented with electroluminescence. At room temperature the CL spectra for defect related emission intensity was enhanced with the electron beam penetration depth. We observed a variation in defect related green emission along the nanorod axis. This indicates a relatively poor structural quality near the interface between ZnO NRs and p-SiC substrate. We associate the green emission with oxygen vacancies. Analysis of the low-temperature (5 K) emission spectra in the UV region suggests that the synthesized nanorods contain shallow donors and acceptors.
机译:在室温和5 K补充电致发光的情况下,通过阴极发光(CL)测量来探测通过气-液-固(VLS)技术在4H-p-SiC衬底上生长的ZnO纳米棒(NRs)的光学性质。在室温下,与缺陷有关的发射强度的CL光谱随电子束穿透深度的增加而增强。我们观察到了与缺陷相关的绿色发射沿纳米棒轴的变化。这表明在ZnO NR和p-SiC衬底之间的界面附近,结构质量相对较差。我们将绿色排放与氧空位联系起来。对紫外线区域的低温(5 K)发射光谱的分析表明,合成的纳米棒包含较浅的供体和受体。

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